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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V. The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter. Package Drawings (unit: mm) 5.7 0.1 2.0 0.2 1.5 0.1 FEATURES 1.0 1 0.5 0.1 2 3 * New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages * Can be directly driven by an IC operating at 5 V. * Low on-resistance RDS(ON) = 0.35 MAX. @VGS = -4 V, ID = -1.5 A RDS(ON) = 0.20 MAX. @VGS = -10 V, ID = -1.5 A 0.5 0.1 2.1 0.4 0.05 0.85 0.1 4.2 Equivalent Circuit Drain (D) Electrode Connection 1. Source Internal 2. Drain Diode 3. Gate Marking: UA1 Gate (G) Gate Protect Diode Source (S) QUALITY GRADE Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID(DC) ID(pulse) PW 10 ms Duty Cycle 1 % Mounted on ceramic board of 7.5 cm2 x 0.7 mm VGS = 0 VDS = 0 Conditions Ratings -30 -20/+10 -/+3.0 -/+6.0 Unit V V A A Total Power Loss Channel Temperature Storage Temperature PT Tch Tstg 3.65 0.1 0.55 2.0 150 -55 to +150 5.4 0.25 W C C The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D10803EJ3V0DS00 (3rd edition) (Previous No. TC-2490) Date Published January 1999 N CP(K) Printed in Japan (c) 1994 2SJ357 ELECTRICAL SPECIFICATIONS (TA = +25 C) Parameter Drain Shut-down Current Gate Leak Current Gate Cutoff Voltage Forward Transfer Admittance Drain-Source On-Resistance Drain-Source On-Resistance Input Capacitance Output Capacitance Feedback Capacitance On-Time Delay Rise Time Off-Time Delay Fall Time Gate Input Charge Gate-Source Chanrge Gate-Drain Charge Internal Diode Reverse Recovery Time Internal Diode Reverse Recovery Charge Symbol IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD trr VDS = -24 V, VGS = -10 V, ID = -3.1 A, IG = -2 mA IF = 3.0 A di/dt = 50 A/s VDD = -25 V, ID = -1.5 A VGS(on) = -10 V RG = 10 , RL = 17 Conditions VDS = -30 V, VGS = 0 VGS = -16/+10 V, VDS = 0 VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.0 A VGS = -4 V, ID = -1.5 A VGS = -10 V, ID = -1.5 A VDS = -10 V, VGS = 0, f = 1.0 MHz -1.0 1.8 0.23 0.12 645 500 275 8 42 145 170 25.1 2.0 9.8 112 0.35 0.20 -1.5 MIN. TYP. MAX. -10 -/+10 -2.0 Unit A A V S pF pF pF ns ns ns ns nC nC nC ns Qrr 106 nC CHARACTERISTICS CURVES (TA = +25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Derating Factor - % ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA -10 -5 10 PW = 10 m 1 s m s 80 -2 -1 -0.5 -0.2 -0.1 DS 60 0 m s 40 20 -0.05 Single Pulse -0.5 -1 -2 0 25 50 75 100 125 150 -5 -10 -20 -50 -100 TA - Ambient Temperature - C VDS - Drain to Source Voltage - V 2 Data Sheet D10803EJ3V0DS00 2SJ357 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -10 Pulsed ID - Drain Current - A TRANSFER CHARACTERISTICS -10 VDS = -10 V Pulsed -1 ID - Drain Current -A -8 -1 0V -4 .5 V TA = 150 C -0.1 -0.01 -0.001 TA = -25 C TA = 0 C TA = 25 C TA = 75 C -6 -4.0 V -3.5 V -4 -3.0 V -2 -2.5 V VGS = -2.0 V -0.0001 -4 -5 -0.00001 0 -1 -2 -3 -1 -2 -3 -4 VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRINT 0.5 VGS = -4 V Pulsed TA = 150 C TA = 75 C 0.4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittence - S 10 VDS = -10 V Pulsed TA = -25 C 1 0.3 0.2 0.1 TA = 0 C TA = 25 C TA = 75 C 0.01 TA = 150 C 0.1 TA = 25 C TA = 0 C TA = -25 C -10 0.001 -0.0001 -0.001 -0.01 -0.1 -1 0 -0.001 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - -0.01 -0.1 -1 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.3 VGS = -10 V Pulsed TA = 150 C TA = 75 C 0.2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.6 Pulsed 0.4 ID = 3.0 A 0.1 0.2 TA = 25 C 0 -0.001 -0.01 TA = 0 C -0.1 TA = -25 C -1 -10 ID = 1.5 A 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 VGS - Gate to Source Voltage - V ID - Drain Current - A Data Sheet D10803EJ3V0DS00 3 2SJ357 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -10 ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 Pulsed VGS = 0 f = 1 MHz Ciss -1 -0.1 1000 -0.01 100 Crss Coss -0.001 -0.0001 -0.2 10 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 tf trr - Reverse Recovery Time - ns -100 VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS td(on), tr, td(off), tr - Switching Time - ns 1000 VDD = -25 V VGS(ON) = -10 V VGS = 0 di/dt = 50 A/ s 100 td(off) tr 100 10 td(on) 0.1 1 ID - Drain Current - A 10 10 -0.05 -0.1 -0.5 -1 -5 -10 ID - Diode Forward Current - A rth(j-a) - Transient Thermal Resistance - C/ TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 Single Pulse Using ceramic board of 7.5 cm2 x 0.7 mm 10 1 0.1 1m 10 m 100 m PW - Pulse Width - s 1 10 100 4 Data Sheet D10803EJ3V0DS00 2SJ357 [MEMO] Data Sheet D10803EJ3V0DS00 5 2SJ357 [MEMO] 6 Data Sheet D10803EJ3V0DS00 2SJ357 [MEMO] Data Sheet D10803EJ3V0DS00 7 2SJ357 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 |
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